Architectural Techniques to Enable Reliable and Scalable Memory Systems

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even building the next Exascale supercomputer. To ensure even a bare-minimum level of reliability, present-day solutions tend to have high performance, power and area overheads. Ideally, we would like memory systems to remain robust, scalable, and implementable while keeping the overheads to a minimum. This dissertation describes how simple cross-layer architectural techniques can provide orders of magnitude higher reliability and enable seamless scalability for memory systems while incurring negligible overheads.Comment: PhD thesis, Georgia Institute of Technology (May 2017

Doctor of Philosophy in Computing

dissertatio

Doctor of Philosophy

dissertationThe computing landscape is undergoing a major change, primarily enabled by ubiquitous wireless networks and the rapid increase in the use of mobile devices which access a web-based information infrastructure. It is expected that most intensive computing may either happen in servers housed in large datacenters (warehouse- scale computers), e.g., cloud computing and other web services, or in many-core high-performance computing (HPC) platforms in scientific labs. It is clear that the primary challenge to scaling such computing systems into the exascale realm is the efficient supply of large amounts of data to hundreds or thousands of compute cores, i.e., building an efficient memory system. Main memory systems are at an inflection point, due to the convergence of several major application and technology trends. Examples include the increasing importance of energy consumption, reduced access stream locality, increasing failure rates, limited pin counts, increasing heterogeneity and complexity, and the diminished importance of cost-per-bit. In light of these trends, the memory system requires a major overhaul. The key to architecting the next generation of memory systems is a combination of the prudent incorporation of novel technologies, and a fundamental rethinking of certain conventional design decisions. In this dissertation, we study every major element of the memory system - the memory chip, the processor-memory channel, the memory access mechanism, and memory reliability, and identify the key bottlenecks to efficiency. Based on this, we propose a novel main memory system with the following innovative features: (i) overfetch-aware re-organized chips, (ii) low-cost silicon photonic memory channels, (iii) largely autonomous memory modules with a packet-based interface to the proces- sor, and (iv) a RAID-based reliability mechanism. Such a system is energy-efficient, high-performance, low-complexity, reliable, and cost-effective, making it ideally suited to meet the requirements of future large-scale computing systems

Doctor of Philosophy in Computing

dissertationThe demand for main memory capacity has been increasing for many years and will continue to do so. In the past, Dynamic Random Access Memory (DRAM) process scaling has enabled this increase in memory capacity. Along with continued DRAM scaling, the emergence of new technologies like 3D-stacking, buffered Dual Inline Memory Modules (DIMMs), and crosspoint nonvolatile memory promise to continue this trend in the years ahead. However, these technologies will bring with them their own gamut of problems. In this dissertation, I look at the problems facing these technologies from a current delivery perspective. 3D-stacking increases memory capacity available per package, but the increased current requirement means that more pins on the package have to be now dedicated to provide Vdd/Vss, hence increasing cost. At the system level, using buffered DIMMs to increase the number of DRAM ranks increases the peak current requirements of the system if all the DRAM chips in the system are Refreshed simultaneously. Crosspoint memories promise to greatly increase bit densities but have long read latencies because of sneak currents in the cross-bar. In this dissertation, I provide architectural solutions to each of these problems. We observe that smart data placement by the architecture and the Operating System (OS) is a vital ingredient in all of these solutions. We thereby mitigate major bottlenecks in these technologies, hence enabling higher memory densities

Variation-Tolerant Non-Uniform 3D Cache Management in Memory Stacked Multi-Core Processors

Process variations in integrated circuits have significant impact on their performance, leakage and stability. This is particularly evident in large, regular and dense structures such as DRAMs. DRAMs are built using minimized transistors with presumably uniform speed in an organized array structure. Process variation can introduce latency disparity among different memory arrays. With the proliferation of 3D stacking technology, DRAMs become a favorable choice for stacking on top of a multi-core processor as a last level cache for large capacity, high bandwidth, and low power. Hence, variations in bank speed create a unique problem of non-uniform cache accesses in the 3D space.In this thesis, we investigate cache management techniques for tolerating process variation in a 3D DRAM stacked onto a multi-core processor. We modeled the process variation in a 4-layer DRAM memory to characterize the latency variations among different banks. As a result, the notion of fast and slow banks from the core's standpoint is no longer associated with their physical distances with the banks. They are determined by the different bank latencies due to process variation. We develop cache migration schemes that utilize fast banks while limiting the cost due to migration. Our experiments show that there is a great performance benefit in exploiting fast memory banks through migration. On average, a variation-aware management can improve the performance of a workload over the baseline (where the speed of the slowest bank is assumed for all banks) by 17.8%. We are also only 0.45% away in performance from an ideal memory where no PV is present

Thermoelectric Cooling to Survive Commodity DRAMs in Harsh Environment Automotive Electronics

Today, more and more commodity hardware devices are used in safety-critical applications, such as advanced driver assistance systems in automotive. These applications demand very high reliability of electronic components even in adverse environmental conditions, such as high temperatures. Ensuring the reliability of microelectronic components is a major challenge at these high temperatures. The computing systems of these applications rely on DRAMs as working memory, which are built upon bit cells that store charges in capacitors. These commodity DRAMs are optimized for cost per bit and not for high reliability. Thus, very high temperatures impose an enormous challenge for commodity DRAMs as the data retention time and reliability decrease largely, affecting the data correctness. Data correctness can be ensured up to certain temperatures by increasing the refresh rate to counterbalance the retention time reduction. However, this severely degrades the access latencies and the usable DRAM bandwidth. To overcome these limitations, we present for the first time a Thermoelectric Cooling (TEC) solution for commodity DRAMs in harsh-environments, such as automotive. Our TEC solution enables the use of commodity off-the-shelf DRAMs in safety-critical applications by reducing the temperature conditions to a range where they can operate reliably. This TEC solution is applied a posteriori to the DRAM chips without using high-cost package solutions. Thus, it maintains the low-cost targets of such devices, improves the reliability, and at the same time, counterbalances the adverse effects of increasing the refresh rate. To quantitatively evaluate the benefits of TEC on commodity DRAMs in harsh-environments, we performed system-level evaluations with several applications backed up by the measured data on commodity DRAMs. Our experimental results, using accurate multi-physics simulations that employ finite element method, demonstrate that the TEC-based cooling ensures that the maxim..