1/f noise in graphene

We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier concentration of single-layer sheet devices has a behavior characterized by a shape going from the M to the Gamma type as the material inhomogeneity increases, whereas the shape becomes of V type in bilayer sheet devices for any inhomogeneity, or of M type at high carrier concentration. In single-layer nanoribbons, instead, the ratio of noise to resistance versus the latter quantity is approximately constant, whereas in the bilayer case it exhibits a linear decrease on a logarithmic scale as resistance increases and its limit for zero resistance equals the single-layer value. Noise at the Dirac point is much greater in single-layer than in bilayer devices and it increases with temperature. The origin of 1/f noise is attributed to the traps in the device and to their relaxation time dispersion. The coupling of trap charge fluctuations with the electrode current is computed according to the electrokinematics theorem, by taking into account their opposite effects on electrons and holes as well as the device inhomogeneities. The results agree well with experiments.Comment: 27 pages, 5 figures. The final publication is available at link.springer.co

1/f noise in nanowires

We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in metallic films and wires of larger dimension. Additionally, the PSD has a significant low-frequency component and the value of \alpha increases from the usual 1 to ~3/2 as the diameter d is reduced. The value of the normalized fluctuation \frac{}{R^2} also increases as the diameter d is reduced. We observe that there are new features in the 1/f noise as the size of the wire is reduced and they become more prominent as the diameter of the wires approaches 15nm. It is important to investigate the origin of the new behavior as 1/f noise may become a limiting factor in the use of metal wires of nanometer dimensions as interconnects.Comment: 9 pages, 6 figures, published in Nanotechnolog

Reducing MOSFET 1/f Noise and Power Consumption by "Switched Biasing"

Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 ¿m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30

Simple model for 1/f noise

We present a simple stochastic mechanism which generates pulse trains exhibiting a power law distribution of the pulse intervals and a $1/f^\alpha$ power spectrum over several decades at low frequencies with $\alpha$ close to one. The essential ingredient of our model is a fluctuating threshold which performs a Brownian motion. Whenever an increasing potential $V(t)$ hits the threshold, $V(t)$ is reset to the origin and a pulse is emitted. We show that if $V(t)$ increases linearly in time, the pulse intervals can be approximated by a random walk with multiplicative noise. Our model agrees with recent experiments in neurobiology and explains the high interpulse interval variability and the occurrence of $1/f^\alpha$ noise observed in cortical neurons and earthquake data.Comment: 4 pages, 4 figure

Temperature square dependence of the low frequency 1/f charge noise in the Josephson junction qubits

To verify the hypothesis about the common origin of the low frequency 1/f noise and the quantum f noise recently measured in the Josephson charge qubits, we study temperature dependence of the 1/f noise and decay of coherent oscillations. T^2 dependence of the 1/f noise is experimentally demonstrated, which supports the hypothesis. We also show that dephasing in the Josephson charge qubits off the electrostatic energy degeneracy point is consistently explained by the same low frequency 1/f noise that is observed in the transport measurements.Comment: 4 pages, 2 figure

1/f Noise in Electron Glasses

We show that 1/f noise is produced in a 3D electron glass by charge fluctuations due to electrons hopping between isolated sites and a percolating network at low temperatures. The low frequency noise spectrum goes as \omega^{-\alpha} with \alpha slightly larger than 1. This result together with the temperature dependence of \alpha and the noise amplitude are in good agreement with the recent experiments. These results hold true both with a flat, noninteracting density of states and with a density of states that includes Coulomb interactions. In the latter case, the density of states has a Coulomb gap that fills in with increasing temperature. For a large Coulomb gap width, this density of states gives a dc conductivity with a hopping exponent of approximately 0.75 which has been observed in recent experiments. For a small Coulomb gap width, the hopping exponent approximately 0.5.Comment: 8 pages, Latex, 6 encapsulated postscript figures, to be published in Phys. Rev.