Signal Modeling of High Purity Germanium Detectors
Abstract
Pulse shape analysis can be used to analyze radiation incident on a semiconductor diode detector. Finite element analysis (FEA) can be used to simulate high purity germanium detectors with user-specified geometry, impurity concentration, and bias voltage. Subsequent streamline calculation can be used to conduct pulse shape analysis for single and multiple site gamma-ray interactions within the detector volume. Cross sections of the detector can be visualized by contour plots of the electric field, drift velocity magnitude, and collection time, as well as t30 and t90 rise-time values- text
- Germanium
- radiation
- pulse shapes
- gamma ray
- radiation detector
- pulse shape analysis
- pulse shape simulation
- interaction sites
- semiconductor
- HPGE
- high purity germanium
- detector
- signal generation
- signal modeling
- finite element analysis
- semiconductor detector
- semiconductor diode detector
- Shockley-Ramo Theorem
- weighing potential
- Computational Engineering
- Engineering Physics
- Mechanical Engineering
- Other Mechanical Engineering
- Other Physics
- Physics
- Semiconductor and Optical Materials
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This paper was published in DigitalCommons@UConn.
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