Identification of photons in double beta-decay experiments using segmented germanium detectors - studies with a GERDA Phase II prototype detector

The sensitivity of experiments searching for neutrinoless double beta-decay of germanium was so far limited by the background induced by external gamma-radiation. Segmented germanium detectors can be used to identify photons and thus reduce this background component. The GERmanium Detector Array, GERDA, will use highly segmented germanium detectors in its second phase. The identification of photonic events is investigated using a prototype detector. The results are compared with Monte Carlo data.Comment: 20 pages, 7 figures, to be submitted to NIM-

Nanocrystalline and Thin Film Germanium Electrodes with High Lithium Capacity and High Rate Capabilities

Germanium nanocrystals (12 nm mean diam) and amorphous thin films (60-250 nm thick) were prepared as anodes for lithium secondary cells. Amorphous thin film electrodes prepared on planar nickel substrates showed stable capacities of 1700 mAh/g over 60 cycles. Germanium nanocrystals showed reversible gravimetric capacities of up to 1400 mAh/g with 60% capacity retention after 50 cycles. Both electrodes were found to be crystalline in the fully lithiated state. The enhanced capacity, rate capability (1000C), and cycle life of nanophase germanium over bulk crystalline germanium is attributed to the high surface area and short diffusion lengths of the active material and the absence of defects in nanophase materials

Hydrogen peroxide etching proves useful for germanium

Influence of process variations in the etching of germanium with hydrogen peroxide has been studied, along with damage effects due to radiation. The work advances the knowledge of the etching process for germanium

Operation of a high purity germanium crystal in liquid argon as a Compton suppressed radiation spectrometer

A high purity germanium crystal was operated in liquid argon as a Compton suppressed radiation spectrometer. Spectroscopic quality resolution of less than 1% of the full-width half maximum of full energy deposition peaks was demonstrated. The construction of the small apparatus used to obtain these results is reported. The design concept is to use the liquid argon bath to both cool the germanium crystal to operating temperatures and act as a scintillating veto. The scintillation light from the liquid argon can veto cosmic-rays, external primordial radiation, and gamma radiation that does not fully deposit within the germanium crystal. This technique was investigated for its potential impact on ultra-low background gamma-ray spectroscopy. This work is based on a concept initially developed for future germanium-based neutrinoless double-beta decay experiments.Comment: Paper presented at the SORMA XI Conference, Ann Arbor, MI, May 200

Germanium, Arsenic, and Selenium Abundances in Metal-Poor Stars

The elements germanium (Ge, Z=32), arsenic (As, Z=33), and selenium (Se, Z=34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 < [Fe/H] < -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios remain roughly constant. These data do not directly indicate the origin of germanium, arsenic, and selenium at low metallicity, but they suggest that the weak and main components of the s-process are not likely sources.Comment: Accepted for publication in the Astrophysical Journal. (12 pages, 5 figures

Electronegativity and doping in Si1-xGex alloys

Silicon germanium alloys are technologically important in microelectronics but also they are an important paradigm and model system to study the intricacies of the defect processes on random alloys. The key in semiconductors is that dopants and defects can tune their electronic properties and although their impact is well established in elemental semiconductors such as silicon they are not well characterized in random semiconductor alloys such as silicon germanium. In particular the impact of electronegativity of the local environment on the electronic properties of the dopant atom needs to be clarified. Here we employ density functional theory in conjunction with special quasirandom structures model to show that the Bader charge of the dopant atoms is strongly dependent upon the nearest neighbor environment. This in turn implies that the dopants will behave differently is silicon-rich and germanium-rich regions of the silicon germanium alloy

Wedge immersed thermistor bolometer measures infrared radiation

Wedge immersed-thermistor bolometer measures infrared radiation in the atmosphere. The thermistor flakes are immersed by optical contact on a wedge-shaped germanium lens whose narrow dimension is clamped between two complementary wedge-shaped germanium blocks bonded with a suitable adhesive

Nonlinear stability of <i>E</i> centers in Si_1-<i>x</i>Ge_<i>x</i>: electronic structure calculations

Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results

A simulation of the cluster structures in Ge-Se vitreous chalcogenide semiconductors

A structure of germanium selenide glasses is simulated by the featured clusters built from the tetrahedral GeSe4 units up to the clusters with six germanium atoms (Ge6Se16H4 and Ge6Se16H8). Quantum chemical calculations at the DFT level with effective core potentials for Ge and Se atoms for the clusters of different composition reveal their relative stability and optical properties.Comment: 5 pages, 3 Figures include