Influence of nitrogen implantation on electrical properties of Al/SiO2/4H-SiC MOS structure

Krystian Bogumił Król; Mariusz Sochacki; Marcin Turek; Jerzy Żuk; Henryk M. Przewłocki; T. Gutt; Paweł Borowicz; Marek Guziewicz; Jacek Szuber; Monika Kwoka; Piotr Kościelniak; Jan Szmidt

Influence of nitrogen implantation on electrical properties of Al/SiO2/4H-SiC MOS structure

Authors: Krystian Bogumił Król
Mariusz Sochacki
Marcin Turek
Jerzy Żuk
Henryk M. Przewłocki
T. Gutt
Paweł Borowicz
Marek Guziewicz
Jacek Szuber
Monika Kwoka
Piotr Kościelniak
Jan Szmidt
Publication date
Publisher
Doi

Abstract

abstractEN: An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is derectly related to implantation damage and conditions.score: 5collation: 733-73

Similar works

Full text

Warsaw University of Technology Repository

Last time updated on 03/09/2019

This paper was published in Warsaw University of Technology Repository.

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.