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Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

By A. Hirohata, C.R. Guertler, Y.B. Xu and J.A.C. Bland


Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature

Year: 1999
DOI identifier: 10.1109/20.801022
OAI identifier:

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