Extracting information from partially depleted Si detectors with digital sampling electronics

Abstract

International audienceA study of the identification properties and of the energy responseof a Si-Si-CsI(Tl) ΔE-E telescope exploiting a partially depleted secondSi stage has been performed. Five different bias voltages have beenapplied to the second stage of the telescope, one corresponding to fulldepletion, the others associated with a depleted layer ranging from60% to 90% of the detector thickness. Fragment identification hasbeen obtained using either the ΔE-E technique or the Pulse ShapeAnalysis (PSA). Charge collection efficiency has been evaluated. TheΔE-E performance is not affected by incomplete depletion. Isotopicseparation capability improves at lower bias voltages with respect tofull depletion, though charge identification thresholds increase