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Extracting information from partially depleted Si detectors with digital sampling electronics

By G. Pastore, G. Pasquali, N. Le Neindre, G. Ademard, S. Barlini, M. Bini, E. Bonnet, B. Borderie, R. Bougault, G. Casini, A. Chbihi, M. Cinausero, J.A. Duenas, P. Edelbruck, J.D. Frankland, F. Gramegna, Diego Gruyer, A. Kordyasz, T. Kozik, O. Lopez, T. Marchi, L. Morelli, A. Olmi, A. Ordine, M. Pârlog, S. Piantelli, G. Poggi, M.-F. Rivet, E. Rosato, F. Salomon, G. Spadaccini, A.A. Stefanini, S. Valdre, E. Vient, T. Twarog, R. Alba, C. Maiolino and D. Santonocito


International audienceA study of the identification properties and of the energy responseof a Si-Si-CsI(Tl) ΔE-E telescope exploiting a partially depleted secondSi stage has been performed. Five different bias voltages have beenapplied to the second stage of the telescope, one corresponding to fulldepletion, the others associated with a depleted layer ranging from60% to 90% of the detector thickness. Fragment identification hasbeen obtained using either the ΔE-E technique or the Pulse ShapeAnalysis (PSA). Charge collection efficiency has been evaluated. TheΔE-E performance is not affected by incomplete depletion. Isotopicseparation capability improves at lower bias voltages with respect tofull depletion, though charge identification thresholds increase

Topics: [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]
Publisher: 'EDP Sciences'
Year: 2014
DOI identifier: 10.1051/epjconf/201588010013
OAI identifier: oai:HAL:in2p3-01168867v1
Provided by: HAL-CEA
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