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Saturation of intersubband transitions in p-doped GaAs/AlGaAs quantum wells \ud

By R. Steed, M. Matthews, J. Plumridge, M. Frogley, C. Phillips, Z. Ikonic, P. Harrison, O. Malis, L.N. Pfeiffer and K.W. West

Abstract

Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs/AlGaAs quantum wells. The transitions had energies of 183 and 160 meV and the measured population relaxation times were 2±1.5 and 0.3±0.1 ps, respectively. Modeling of the quantum wells with a 6×6 k·p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases

Publisher: American Institute of Physics
Year: 2008
OAI identifier: oai:eprints.whiterose.ac.uk:4087

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