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Thermal effects in InGaAs/AlAsSb quantum-cascade lasers

By C.A. Evans, V.D. Jovanović, D. Indjin, Z. Ikonić and P. Harrison

Abstract

A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures

Publisher: The Institution of Engineering and Technology
Year: 2006
OAI identifier: oai:eprints.whiterose.ac.uk:7975

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