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A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes

By S.C.L.T. Mun, C.H. Tan, S.J. Dimler, L.J.J. Tan, J.S. Ng, Y.L. Goh and J.P.R. David


We study the breakdown characteristics and timing statistics of InP and In0.52Al0.48As single-photon avalanche photodiodes (SPADs) with avalanche widths ranging from 0.2 to 1.0 mu m at room temperature using a random ionization path-length model. Our results show that, for a given avalanche width, the breakdown probability of In0.52Al0.48As SPADs increases faster with overbias than InP SPADs. When we compared their timing statistics, we observed that, for a given breakdown probability, InP requires a shorter time to reach breakdown and exhibits a smaller timing jitter than In0.52Al0.48As. However, due to the lower dark count probability and faster rise in breakdown probability with overbias, In0.52Al0.48As SPADs with avalanche widths <= 0.5 mu m are more suitable for single-photon detection at telecommunication wavelengths than InP SPADs. Moreover, we predict that, in InP SPADs with avalanche widths <= 0.3 mu m and In0.52Al0.48As SPADs with avalanche widths <= 0.2 mu m, the dark count probability is higher than the photon count probability for all applied biases

Publisher: Institute of Electrical and Electronics Engineers
Year: 2009
OAI identifier: oai:eprints.whiterose.ac.uk:8731

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