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Large-signal charge control modeling of photoreceivers for applications up to 40 Gb/s

By J.P Helme, P.A Houston and C.H Tan

Abstract

A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage). For a BER = 10(-9) at 40 Gb/s the best sensitivity of approximately -20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately -14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data

Publisher: Institute of Electrical and Electronics Engineers
Year: 2009
OAI identifier: oai:eprints.whiterose.ac.uk:9033

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