Skip to main content
Article thumbnail
Location of Repository

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

By N.F. Hasbullah, Jo Shien Ng, Hui-Yun Liu, M. Hopkinson, J. David, T.J. Badcock and D.J. Mowbray

Abstract

Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer growth temperature increases and is attributed to a reduction in the amount of nonradiative recombination. Temperature-dependent IEL measurements show a reduction of the IEL with increasing temperature. Two thermally activated quenching processes, with activation energies of ˜ 157 meV and ˜ 320 meV, are deduced and these are attributed to the loss of electrons and holes from the QD ground state to the GaAs barriers. Our results demonstrate that growing the GaAs barriers at higher temperatures improves their quality, thereby increasing the radiative efficiency of the QD emission

Publisher: Institute of Electrical and Electronics Engineers
Year: 2008
OAI identifier: oai:eprints.whiterose.ac.uk:10447

Suggested articles


To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.