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Gallium-nitride thin-film deposition on substrates structured by electron beam lithography

By Miroslav Knotek

Abstract

This bachelor's thesis deals with a fabrication of gallium nitride (GaN) thin films on silicon substrates, which were structured by electron beam lithography. In thesis, different resists for selective growth of nanostructures at elevated temperatures are examined

Topics: positive and negative resists.; selektivní růst; molecular epitaxy; depozice tenkých vrstev; Gallium nitride; Nitrid gallia; electron beam lithography; deposition thin films; pozitivní a negativní rezisty.; selective growth; molekulární epitaxe; elektronová litografie
Publisher: Vysoké učení technické v Brně. Fakulta strojního inženýrství
Year: 2013
OAI identifier: oai:invenio.nusl.cz:213709
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