Gallium-nitride thin-film deposition on substrates structured by electron beam lithography
Abstract
This bachelor's thesis deals with a fabrication of gallium nitride (GaN) thin films on silicon substrates, which were structured by electron beam lithography. In thesis, different resists for selective growth of nanostructures at elevated temperatures are examined- info:eu-repo/semantics/bachelorThesis
- positive and negative resists.; selektivní růst; molecular epitaxy; depozice tenkých vrstev; Gallium nitride; Nitrid gallia; electron beam lithography; deposition thin films; pozitivní a negativní rezisty.; selective growth; molekulární epitaxe; elektronová litografie
Similar works
Full text
Last time updated on 10/08/2016
This paper was published in National Repository of Grey Literature.
Having an issue?
Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.