Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties

Niebel, Claude; Kim, Yeongin; Ruzié, Christian; Karpinska, Jolanta; Chattopadhyay, Basab; Schweicher, Guillaume; Richard, Audrey; Lemaur, Vincent; Olivier, Yoann; Cornil, Jérôme; Kennedy, Alan R.; Diao, Ying; Lee, Wen-Ya; Mannsfeld, Stefan; Bao, Zhenan; Geerts, Yves H.

oai:strathprints.strath.ac.uk:53890

Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties

Authors: Claude Niebel
Yeongin Kim
Christian Ruzié
Jolanta Karpinska
Basab Chattopadhyay
Guillaume Schweicher
Audrey Richard
Vincent Lemaur
Yoann Olivier
Jérôme Cornil
Alan R. Kennedy
Ying Diao
Wen-Ya Lee
Stefan Mannsfeld
Zhenan Bao
Yves H. Geerts
Publication date: 1 January 2015
Publisher
Doi

Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1

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