research article
oaioai:eprints.lib.hokudai.ac.jp:2115/17219

Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing

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Publication date
1 January 2007
Publisher
American Institute of Physics
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    Abstract

    Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50/Ru/Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10/IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2 K. A high tunneling spin polarization of 0.88 at 4.2 K was estimated for epitaxial CCFA films with the B2 structure. ©2007 American Institute of Physic

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    This paper was published in Hokkaido University Collection of Scholarly and Academic Papers.

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