MOS capacitance-voltage characteristics from electron-trapping at dopant donor impurity

Abstract

The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method. Fermi - Dirac distribution and impurity denization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and majority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications. ? 2011 Chinese Institute of Electronics