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Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

By X. M. Wen, C. Lincoln, T. A. Smith, L. V. Dao and P. Hannaford

Abstract

In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures

Topics: Condensed media, Electron relaxation, GAAS, Generation, INAS, Quantum dots, Self-induced transparency, Spectra, Spectroscopy, White-light continuum
Publisher: Institute of Physics Publishing
Year: 2009
DOI identifier: 10.1088/0022-3727
OAI identifier: oai:vtl.cc.swin.edu.au:swin:11394
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