5 páginas, 3 fiugras, 1 tabla.-- PACS:
81.70.Jb; 61.16.BgA phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of aberration-corrected Z-contrast scanning transmission electron microscopy images. The method is exemplified for InAsxP1−x alloys using epitaxial thin films with calibrated compositions as standards. Using this approach we have determined the composition of the two-dimensional wetting layer formed between self-assembled InAs quantum wires on InP(0 0 1) substrates.This work was supported by the Office of Basic Energy
Sciences, Division of Materials Sciences and Engineering, US
DOE (MVandSJP),the SANDiE European Network of Excellence
(Contract No NMP4-CT-2004-500101),the Spanish MEC
(TEC2005-05781-C03-01y02,NAN2004-09109-C04-01,Consoli-
der-Ingenio2010CSD2006-00019),the CAM(S0505ESP0200)
and the Junta de Andalucia(PAI research groups TEP-120 and TIC-
145;project No PAI05-TEP-00383).Peer reviewe
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