N-side illuminated microcrystalline silicon solar cells

Abstract

Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the J-V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 mum. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of muc-Si:H single junction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance. (C) 2001 American Institute of Physics