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Dressed Photon-phonon Technology for Ultra Flat Surface

By T. Yatsui and M. Ohtsu

Abstract

A reduction of the surface roughness, Ra, is required in various applications including electronic devic-es and / or optical devices. Although chemical-mechanical polishing (CMP) has been used to flatten the sur-faces, it is generally limited to reducing Ra to about 2 Å because the polishing pad roughness is as large as 10 m, and the polishing-particle diameters in the slurry are as large as 100 nm. We therefore developed a new polishing method, dressed-photon and phonon etching (DPP etching), that uses dressed photon based on an autonomous phonon-assisted process. DPP etching does not use any polishing pad, with which we obtained ultra-flat silica surface with angstrom-scale average roughness as small as Ra of 0.1 nm. Addi-tionally, we succeeded in reduction of the Ra for the three-dimensional structures. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3526

Topics: Dressed-photon method, Phonon etching method, Surface roughness
Publisher: Sumy State University
Year: 2013
OAI identifier: oai:essuir.sumdu.edu.ua:123456789/35264
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