Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

Abstract

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.This study was supported by the National Research Foundation of Korea Funded by the Ministry of Education, Science, and Technology (KRF2011-0028850and 2011-0027329)