Nickel Carbide as a Source of Grain Rotation in Epitaxial Graphene

Abstract

Graphene has a close lattice match to the Ni(111) surface, resulting in a preference for 1 × 1 configurations. We have investigated graphene grown by chemical vapor deposition (CVD) on the nickel carbide (Ni₂C) reconstruction of Ni(111) with scanning tunneling microscopy (STM). The presence of excess carbon, in the form of Ni₂C, prevents graphene from adopting the preferred 1 × 1 configuration and leads to grain rotation. STM measurements show that residual Ni₂C domains are present under rotated graphene. Nickel vacancy islands are observed at the periphery of rotated grains and indicate Ni₂C dissolution after graphene growth. Density functional theory (DFT) calculations predict a very weak (van der Waals type) interaction of graphene with the underlying Ni₂C, which should facilitate a phase separation of the carbide into metal-supported graphene. These results demonstrate that surface phases such as Ni₂C can play a major role in the quality of epitaxial graphene