Thermodynamic Behavior of Excitonic Emission Properties in Manganese- and Zinc-Codoped Indium Phosphide Diluted Magnetic Semiconductor Layers

Abstract

The thermodynamic behavior of excitonic emission properties in manganese- and zinc-codoped indium phosphide (InMnP:Zn) diluted magnetic semiconductor (DMS) layers was investigated. Compared to the InMnP:Zn DMS layer (Mn approximate to 0.06%), the inhomogeneous thermal-broadening of the excitonic-emission line-width in InMnP:Zn DMS layer (Mn approximate to 0.29%) is dominant at lower temperatures. This is attributed to the increase of ionized impurity scattering from Mn ions and results in the increase of exciton-phonon coupling strength. As a consequence, high Mn content can lead to low excitonic emission efficiency, although generally a larger Mn content is favorable to increase the Curie temperature of a DMS material.This research was supported by the National Research Foundation Grant (Grant Nos. NRF-2011-0000016, NRF-K20902001603-10E0100-04010, K20902001819-10B1200-23110, and KRF-2008-313-000264) funded by the Korean government of Ministry of Education, Science and Technology (MEST)