The detailed characterization of a dialkoxyphenylene-difluorobenzothiadiazole based conjugated polymer poly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole)] (PPDT2FBT) is reported. PPDT2FBT closely tracks theoretical photocurrent production while maintaining a high fill factor in remarkably thick films. In order to understand the properties that enable PPDT2FBT to function with thick active layers, the effect of film thickness on the material properties and device parameters was carefully studied and compared to three benchmark polymers. Optical modeling, grazing incidence wide angle X-ray scattering, cross-sectional transmission electron microscopy, transient photoconductivity, and extensive device work were carried out and have clarified the key structural features and properties that allow such thick active layers to function efficiently. The unique behavior of thick PPDT2FBT films arises from high vertical carrier mobility, an isotropic morphology with strong, vertical p-p stacking, and a suitable energy band structure. These physical characteristics allow efficient photocurrent extraction, internal quantum efficiencies near 100% and power conversion efficiencies over 9% from exceptionally thick active layers in both conventional and inverted architectures. The ability of PPDT2FBT to function efficiently in thick cells allows devices to fully attenuate incident sunlight while providing a pathway to defect-free film processing over large areas, constituting a major advancement toward commercially viable organic solar cells.S.-J.K, B.W., and T.L.N. contributed equally to this work. This work was supported by the International Cooperation and the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (Grant Nos. 20123010010140 and 20133030011330). This work was also supported by the National Research Foundation (NRF) of Korea (Grant No. 2015R1D1A1A09056905, 2015M1A2A2057506 and 20100020209). H. Y. Woo acknowledges the financial support by LG Yeonam Foundation during a sabbatical year at University of California, Santa Barbara
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