InN nanoflowers grown by metal organic chemical vapor deposition
Abstract
Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern. (c) 2006 American Institute of Physics- 期刊论文
- Crystal-growth
- Nitride
- Nanowires
- 半导体物理
- crystal growth
- nitrides
- nanowires
- 晶体生长
- crystals--growth
- crystal growth from melt
- bridgman method
- czochralski method
- edge-defined film fed growth
- efg
- kyropoulous method
- lec growth
- liquid encapsulated czochralski method
- stepanov method
- stockbarger method
- verneuil process
- crystal growth from vapour
- crystal purification
- purification, crystal
- croissance des cristaux
- kornwachstum
- andrade method
- czochralski process
- nitride
- nitrures
- atomic wires
- molecular wires
- quantum wires
- subnanoscale wires
- semiconductor nanowires
- semiconductor quantum wires
- quantum wire lasers
- nano-sized wires
- nano scale wires
- nano wires
- nanoscale wires