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Development of lead-free thin-film dielectrics for capacitor applications

By David Anthony Darbyshire


This PhD project aims to develop lead-free thin-film dielectric materials for fixed value, voltage tunable and high-k zipping variable capacitors using growth techniques that can be scaled for silicon batch fabrication. The thesis specifically details the growth and characterisation of barium zirconate titanate (BZT) and bismuth zinc niobate (BZN) dielectric thin films. Fixed value and tunable capacitors have been realised through the use of low and high permittivity dielectric thin film materials in both the amorphous and crystalline states. Planar devices fabricated using BZT and BZN dielectric thin films were grown by sol-gel and RF magnetron sputtering, respectively. The effects of different bottom electrodes were also investigated. Capacitors in a metal-insulator-metal (MIM) [metal-ferroelectric-metal (MFM) for BZT] structure have been fabricated to characterise the dielectric films at low frequency to 300 kHz. Cont/d

Publisher: Cranfield University
Year: 2010
OAI identifier:
Provided by: Cranfield CERES

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  6. (2000). Alternative dielectrics to silicon dioxide for memory and logic devices; doi
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  8. (2003). Atomistic and continuum studies of crack-like diffusion wedges and associated dislocation mechanisms in thin films on substrates; doi
  9. (2004). Ba0.5Sr0.5TiO3- Bi1.5Zn1.0Nb1.5O7 composite thin films with promising microwave dielectric properties for microwave device applications;
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  18. (2004). Characterisation of sol-gel derived Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films; doi
  19. (2002). Characteristics and crystal structure of the Ba(Zr0.2Ti0.8)O3 thin films deposited by RF magnetron sputtering; doi
  20. (2006). Characterization of Ba(Zr0.05Ti0.95)O3 thin film prepared by sol-gel process; doi
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  22. (2005). Composite tunable materials with low loss-factor at microwaves; 35 th doi
  23. (2003). Composition control and dielectric properties of bismuth zinc niobate thin films synthesised by 222 radio-frequency magnetron sputtering; doi
  24. (2007). Coordination behaviour of acetoacetate ligands with attached methacrylate groups 216 containing alkyl-spacers of differenet length to titanium and zirconium alkoxides; doi
  25. (2003). Damage after annealing and aging at room temperature of platinized silicon substrates; doi
  26. (1999). Design and modeling of RF MEMS tunable capacitors using electro-thermal actuators; doi
  27. (2007). Design and simulation of zipping variable capacitors;
  28. (2003). Dielectric and ferroelectric properties of Ba(Zr0.35Ti0.65)O3 thin films grown by a sol-gel process; doi
  29. (2006). Dielectric behaviour of Ba(Ti1-xZrx)O3 solid solution; doi
  30. (2002). Dielectric polarization and strain behavior of Ba(Ti0.92Zr0.08)O3 single crystals; doi
  31. (2002). Dielectric properties and high tunability of Ba(Ti0.7Zr0.3)O3 ceramics under dc electric field; doi
  32. (2001). Dielectric properties and microstructure of SrTiO3/BaTiO3 multilayer thin films prepared by a chemical route.; Thin Solid Films 385 doi
  33. (2005). Dielectric properties and microstructures of Ba(Ti,Zr)O3 multilayer ceramic capacitors with Ni electrodes; doi
  34. (2007). Dielectric properties of Ba(Ti1-xZrx)O3 solid solutions; doi
  35. (2006). Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition;
  36. (2008). Dielectric properties of heterostructured BZT thin films prepared by sol-gel technique; doi
  37. (2006). Dielectric relaxation in gigahertz region and phase transition of BaTiO3-based ceramics; doi
  38. (2004). Diffuse phase transition and dielectric tunability of Ba(ZryTi1-y)O3 relaxor ferroelectric ceramics; doi
  39. (2006). Distributed phase shifter with pyrochlore bismuth zinc niobate thin films; doi
  40. (1995). Effect of Ar gas pressure on growth, structure, and mechanical properties of sputtered Ti, Al, TiAl, and Ti3Al films; Thin Solid Films, doi
  41. (2005). Effect of porosity on the ferroelectric properties of sol-gel prepared lead zirconate titanate thin films; Thin Solid Films, doi
  42. (2008). Effect of seed layers on dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films; doi
  43. (2005). Effect of stacking layers on the microwave dielectric properties of MgTiO3/CaTiO3 multilayered thin films; doi
  44. (2008). Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method; doi
  45. (2007). Effects of doping elements on ZnO etching characteristics with CH4/H2/Ar plasma; Thin Solid Films, doi
  46. (2008). Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors;
  47. (2003). Effects of O2 annealing after etching doi
  48. (2003). Effects of Sr substitution on dielectric characteristics doi
  49. (2006). Electric field dependent dielectric properties and high tunability of BaZrxTi1-xO3 relaxor ferroelectrics; doi
  50. (2000). Electrical properties of a siliconbased PT/PZT/PT sandwich structure; doi
  51. (1997). Electroceramics – Materials, properties, applications; Chapman and Hall doi
  52. (2001). Electron beam lithography and reactive ion etching of nanometer size features in niobium film; Material Science and Engineering, doi
  53. (2004). Electrostatic actuators with expanded tuning range due to biaxial intrinsic stress gradients; doi
  54. (2007). Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayer films;
  55. (2006). Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O3 thin films grown on La0.7Sr0.3MnO3 bottom layer; doi
  56. (2008). Enhanced dielectric tunability properties of Ba(ZrxTi1-x)O3 thin films using seed layers on Pt/Ti/SiO2/Si substrates; doi
  57. (2008). Enhanced electrical properties of multilayer 207 Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3 thin films for tunable microwave applications;
  58. (2005). Erratum: Ferroelectric materials for microwave tunable applications; doi
  59. (2009). Etch characteristics of indium zinc oxide thin films in a C2F6/Ar plasma; Thin Solid Films, doi
  60. (2004). Etching mechanisms of doi
  61. (2004). Etching of sub-micron high aspect ratio holes in oxides and polymers; Microelectronic Engineering, doi
  62. (1990). Fabrication of ultra small Nb-AlOx-Nb Josephson tunnel junctions; doi
  63. (2006). Fatigue behaviour of Pb(Zr,Ti)O3/PbZrO3 multilayer ferroelectric thin films; doi
  64. (2004). Fatigue crack growth in ferroelectric ceramics driven by alternating electric fields; doi
  65. (1999). Ferroelectric ceramics: history and technology; doi
  66. (2003). Ferroelectric materials for microwave tunable applications; doi
  67. (2000). Ferroelectric thin films and multilayer structures based on them;
  68. (2006). Ferroelectric-dielectric tunable composites; doi
  69. (2002). Ferroelectric-relaxor behavior of Ba(Ti0.7Zr0.3)O3 ceramics; doi
  70. (1998). Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics; doi
  71. (2002). Frequency agile materials for electronics (FAME) – progress in the DARPA programmes; doi
  72. (1998). Fujisaki; Thermal stability of Pt bottom electrodes for ferroelectric capacitors; doi
  73. (2002). Generation of charged clusters during thermal evaporation of gold; doi
  74. (2006). Geometrical scaling effects in high permittivity capacitors; Integrated Ferroelectrics, doi
  75. High-Q continuously tunable zipping varactors with large tuning range; doi
  76. (1996). Highly insulative barium zirconatetitanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications; doi
  77. (2005). Impact of low k dielectrics on microelectronics reliability; doi
  78. (2007). Improvement of dielectric loss of (Ba,Sr)(Ti,Zr)O3 ferroelectrics for tunable devices; doi
  79. (2006). Inductively coupled plasma reactive ion etching of ZnO using doi
  80. (2003). Influence of a TiO2 adhesion layer on the structure and the orientation of a Pt layer in Pt/TiO2/SiO2/Si structures, doi
  81. (2003). Influence of deposition parameters on the dielectric properties of rf magnetron sputtered Ba(ZrxTi1-x)O3 thin films; doi
  82. (2003). Influence of Pt/TiO2 bottom electrodes on the properties of ferroelectric Pb(Zr,Ti)O3 thin films; doi
  83. (2004). Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films; doi
  84. (2006). Influence of thickness and Zr content on Ba(TixZr1-x)O3 thin films; doi
  85. (2001). Integration challenges for low dielectric constant materials; doi
  86. (1996). Investigation of the dielectric properties of bismuth pyrochlores; doi
  87. (1997). Investigations of Pt/Ti bottom electrodes for Pb(Zr,Ti)O3 films; doi
  88. (2005). Investigations on structural evolution and dielectric characteristics of high performance Bi-based dielectrics; doi
  89. (2002). Investigations on the sol-gel-derived barium zirconium titanate thin films; doi
  90. (1986). Ion and plasma assisted etching of holographic gratings; doi
  91. (2004). Ivers-Tiffee; Annealing effects on structural and dielectric properties of tunable BZT thin films; doi
  92. (2004). Ivers-Tiffee; Ba0.6Sr0.4TiO3 and BaZr0.3Ti0.7O3 thick films as tunable microwave dielectrics; doi
  93. (2005). Ivers-Tiffee; Investigation of BZT thin films for tunable microwave applications; doi
  94. (2008). Low dielectric loss and enhanced tunability of Ba(Zr0.3Ti0.7)O3–based thin film by sol-gel method; doi
  95. (2006). Low-loss tunable capacitors fabricated directly on gold bottom electrodes; doi
  96. (2003). Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering; doi
  97. (2004). Lowtemperature processing of ferroelectric thin films compatible with silicon integrated circuit technology; doi
  98. (2000). Materials options for dielectrics in integrated capacitors; doi
  99. (1958). Measurement of sheet resistivities with the four-point probe; The Bell Systems Technical Journal, doi
  100. (1990). Measurements of the intrinsic stress in thin metal films; doi
  101. (2003). Medium permittivity bismuth zinc niobate thin film capacitors; doi
  102. (1994). Microstructure and mechanical properties of sputtered platinum films; Thin Solid Films, doi
  103. (2003). Microwave dielectric properties of CaTiO3 and MgTiO3 thin films; doi
  104. (2005). Microwave dielectric properties of magnesium calcium titanate thin films; doi
  105. (2005). Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films; doi
  106. (2005). Microwave planar capacitors employing low loss, high-K, and tunable BZN thin films; doi
  107. (2002). Microwave tunable components and subsystems based on ferroelectrics: Physics and principles of design; doi
  108. (2002). Modeling dielectric response and losses of ferroelectrics at microwave frequencies; doi
  109. (2001). Modeling microwave dielectric characteristics of thin ferroelectric films for tunable planar structures; doi
  110. (2006). Morphotropic phase boundary (MPB) effect in Pb(Zr,Ti)O3 rhombohedral/tetragonal multilayer films; doi
  111. (2005). Nanoscale niobium trilayer technology using temperature controlled pattern transfer; Microelectronic Engineering, doi
  112. (2006). New insight in the role of modifying ligands in the sol-gel processing of metal alkoxide precursors: A possibility to approach new classes of material; doi
  113. (2005). Nonlinear dielectric properties of (Ba,Sr)TiO3 and Ba(Zr,Ti)O3 thin films for tunable 211 microwave device applications; doi
  114. (1989). Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering; Thin Solid Films, doi
  115. (2004). Orientation control and dielectric properties of sol-gel deposited Ba(Ti, Zr)O3 thin films; doi
  116. (2000). Orientation dependence of the ferroelectric and piezoelectric behavior of Ba(Ti1-xZrx)O3 single crystals; doi
  117. (2005). Phase decomposition and dielectric properties of reactively sputtered bismuth zinc niobate pyrochlore thin films deposited from monoclinic zirconolite target; doi
  118. (1996). Phase transformation and phase distribution of pyrochlore structure in Bi2O3-ZnO-NB2O5 system; doi
  119. (2000). Phase transition related stress in ferroelectric thin films; Thin Solid Films 375 doi
  120. (2004). Phase transition studies of sol-gel deposited barium zirconate titanate thin films; Thin Solid Films 447-448 doi
  121. (2002). Piezoelectric and strain properties of Ba(Ti1-xZrx)O3 ceramics; doi
  122. (2006). Piezoelectric properties of a Ba(Zr0.075Ti0.925)O3 single crystal induced by poling treatment; doi
  123. (2006). Piezoelectrically actuated tunable capacitor; doi
  124. (2001). Platinum hillocks in Pt/Ti film stacks deposited on thermally oxidised Si substrate; doi
  125. (2000). Potential impact of ferroelectric technology for PCS and cellular communications; doi
  126. (2005). Preparation and characterisation of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering; doi
  127. (2005). Preparation and dielectric properties of Ba(ZrxTi1-x)O3 thin films grown by a sol-gel process; doi
  128. (2007). Preparation and dielectric properties of Bi1.5Zn1.0Nb1.5O7-Ba0.5Sr0.5TiO3 composite thick films;
  129. (2006). Preparation and tunability properties of Ba(ZrxTi1-x)O3 thin films grown by a sol-gel process; doi
  130. (1977). Principles and applications of ferroelectrics and related materials; doi
  131. (2006). Properties of sol-gel derived bismuth-based pyrochlore thin films; doi
  132. (1998). Pursuing the perfect low-k dielectric; Semiconductor International,
  133. (1981). Reactive ion etching of LiNbO3; doi
  134. (1993). Reactive ion etching of niobium in SF6/O2 to produce sloped sidewall profiles; doi
  135. (1981). Reactive ion etching of niobium; doi
  136. (1983). Relaxor behavior in sol-gel-derived BaZr(0.40)Ti(0.60)O3 thin films; doi
  137. (2005). Relaxor behaviour of (Ba,Sr)(Zr,Ti)O3 ceramics; doi
  138. (2006). Relaxor behaviours and tunability doi
  139. (2002). Relaxors as high--materials for multilayer and thin film capacitors; doi
  140. (1999). Remiens; Electrical properties of sputtered PZT films on stabilised platinum electrode; doi
  141. (2002). Self-mending of microcracks in barium titanate glass-ceramic thin films with high dielectric constant; doi
  142. (1997). Single and multilayer ferroelectric doi
  143. (2000). Sol-gel synthesis of nano-scaled doi
  144. (2007). SrTiO3/BaTiO3 multilayer thin films for integrated tunable capacitors applications; doi
  145. (2010). Stable zipping RF MEMS varactors; doi
  146. (1997). Stress effects in ferroelectric thin films; Solid State communications 101 doi
  147. (1989). Stress-related effects in thin films; Thin Solid Films, doi
  148. (2004). Structural and dielectric properties of Ba(ZrxTi1-x)O3 thin films prepared by a sol-gel process; doi
  149. (1998). Structural and electrical characteristics of Ba(Zr0.12Ti0.88)O3 thin films deposited on LaNiO3 electrode by RF magnetron sputtering;
  150. (2002). Structural study of an unusual cubic pyrochlore Bi1.5Zn0.92Nb1.5O6.92; doi
  151. (2004). Structural trends and dielectric properties of Bi-based pyrochlores; doi
  152. (2004). Structural, dielectric and optical properties of Ba(Ti, Zr)O3 thin films prepared by chemical solution deposition; Thin Solid Films 460 doi
  153. (2006). Structure and electrical characteristics of RF magnetron sputtered doi
  154. Studies on the dielectric and relaxor behaviour of sol-gel derived barium strontium zirconate titanate thin films; doi
  155. (2006). Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1-x)O3 (0.30x0.70) thin films; doi
  156. (1983). Subba Rao; Oxide pyrochlores – A review; doi
  157. (2008). Surface micromachined GHz tunable capacitor with 14:1 continuous tuning range; doi
  158. (2004). Surface tension and mismatch effects in ferroelectric thin film properties; doi
  159. (2002). Switching dynamics in ferroelectric thin films: An experimental survey; doi
  160. (2003). Tabata; Artificial control of order degree state of B-site ions in Ba(Zr,Ti)O3 by a superlattice technique; doi
  161. (2005). Temperature dependence of the dielectric tunability of pyrochlore bismuth zinc niobate thin films; doi
  162. (2003). The craft of research; doi
  163. (2006). The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method; doi
  164. (2002). The effect of deposition temperature on the electrical and physical properties of the Ba(Zr,Ti)O3 thin films; doi
  165. (2006). Thermal stability of platinum bottom electrode for bismuth titanate thin films; doi
  166. Thickness dependence on the dielectric properties of BaTiO3/SrTiO3 multilayers; doi
  167. (1997). Ti thickness effects in Pt/Ti bottom electrode on properties of (Ba,Sr)TiO3 thin film; doi
  168. (2005). Titanium diffusion and residual stress of platinum thin films on Ti/SiO2/Si substrates; doi
  169. (2004). Tunability and loss of the ferroelectric-dielectric composites; doi
  170. (1998). Tunable capacitors with programmable capacitance-voltage characteristics; Solid-State Sensors and Actuators Workshop,
  171. (2006). Tunable dielectric behaviors of barium zirconate titanate thin films; doi
  172. (2006). Tunable, low loss Bi1.5Zn1.0Nb1.5O7/ Ba0.6Sr0.4TiO3/ Bi1.5Zn1.0Nb1.5O7 sandwich films;
  173. (2005). Variation in 111 d-space and generation of hillocks in platinum thin-film electrodes by heat treatment; doi
  174. (2003). Voltage drop at interfaces in multilayer ferroelectrics; doi
  175. (1987). Waveguide and microlens components for optical signal processing and communications; MSc Dissertation,

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