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A comparative study for profiling ultrathin boron layers in Si

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Abstract

The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Topics: QD
Publisher: WILEY-V C H VERLAG GMBH
OAI identifier: oai:wrap.warwick.ac.uk:8944
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