Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells
Abstract
In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. © 2017 The Authors. Published by Elsevier Ltd- status-type:publishedVersion
- doc-type:Article
- doc-type:Text
- heterojunctions
- PEDOT:PSS
- solar cells
- Voc potential
- Crystalline materials
- Heterojunctions
- Passivation
- Silicon
- Silicon solar cells
- Silicon wafers
- Solar cells
- a-Si:H
- Crystalline silicon wafers
- Crystalline silicons
- Hole selective layers
- Layer stacks
- PEDOT:PSS
- Surface passivation
- Conducting polymers
- ddc:333,7
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Last time updated on 21/11/2017
This paper was published in Institutionelles Repositorium der Leibniz Universität Hannover.
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