'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
Includes bibliographical references.We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In0.2Ga0.8As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.This work was supported by the U.S. Department of Energy under Contract DE-AC04-76DP00789
