Abstract
Transition metal chalcogenide thin films of the type FexZrSe₂ have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe₂ thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η⁵-C₅H₄Se)₂Zr(η⁵-C₅H₅)₂]₂. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe₂ phase, along with secondary phases of FeSe and ZrO₂. Upon intercalation, a small optical band gap enhancement (Eg(direct)opt = 1.72 eV) is detected in comparison with that of the host material
