'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
Abstract
A semi-analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted