This paper presents the design, simulations and measurements of a fully integrated low noise amplifier (LNA) for Ultra-Wideband applications. The circuit has been implemented in a 0.4 μm silicon-germanium (SiGe:C) bipolar technology which features a 46 GHz cut-off frequency. The LNA exhibits in simulation a flat gain of 23 dB from 3 to 9 GHz and shows a noise figure lower than 5 dB over the whole band. The feedback Darlington configuration allow to obtain good return losses without any matching network. The output 1 dB compression point is below –5 dBm within the band of interest. The UWB input signal is correctly amplified by the LNA and the output spectrum meet the restrictive PART 15 mask of the FCC
