Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can
be used as the first amplifying element for the detection of small signal
charges deposited in the bulk by ionizing particles, X-ray photons or visible
light. Very good noise performance at room temperature due to the low
capacitance of the collecting electrode has been demonstrated. Regular two
dimensional arrangements of DEPFETs can be read out by turning on individual
rows and reading currents or voltages in the columns. Such arrangements allow
the fast, low power readout of larger arrays with the possibility of random
access to selected pixels. In this paper, different readout concepts are
discussed as they are required for arrays with incomplete or complete clear and
for readout at the source or the drain. Examples of VLSI chips for the steering
of the gate and clear rows and for reading out the columns are presented.Comment: 8 pages, 9 figures, submitted to Nucl. Instr. and Methods as
proceedings of the 9th European Symposium on Semiconductor Detectors, Elmau,
June 23-27, 200
