The purpose of this thesis is to introduce a new low-power, reliable and high-performance five-transistor (5T) SRAM in 65nm CMOS technology, which can be used for cache memory in processors and low-power portable devices. An area reduction of ~13% compared to a conventional 6T cell is possible. A biasing ground line is charged by channel leakage current from memory cells in standby, and is used to pre-charge a single bit-line and bias the negative supply voltage of each memory cell to suppress standby leakage power. A major standby power reduction is gained compared to conventional 5T and 6T designs, and up to ~30% compared to previous low-power 6T designs. Read, write, and standby performance and reliability issues are discussed and compared with conventional and low-power 6T SRAM designs
