CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
GaN基绿光LED芯片电流加速失效机理研究
Authors
庄琼云
李志明
潘书万
陈松岩
Publication date
15 June 2019
Publisher
'AI Access Foundation'
Doi
Cite
Abstract
采用电流加速的电应力老化方法研究GaN基绿光LED芯片的失效机理。LED芯片在经过60 mA电流老化424 h后,其发光效率总体趋势都是随老化时间增加而减小,但是小测量电流相比于大测量电流的发光效率衰减程度更为明显。同时,在正向偏压下电流电压曲线基本没有变化,而反向偏压下的反向电流随老化时间的增加而快速增加。笔者认为在电应力老化作用下,随老化时间增加,有源区的缺陷能级增多,在正向偏压下,缺陷能级起到一个有效陷阱的作用,增加了载流子的寿命,降低了辐射复合的几率,使得发光效率降低,但是并没有减小正向偏压下的电流,而反向偏压时,缺陷能级起到了一个漏电通道的作用,使得反向电流增大。福建省自然科学基金面上项目(2015J01655);;\n福建省教育厅基金项目(A类)(JA14025,JA13429)资助项
Similar works
Full text
Available Versions
Xiamen University Institutional Repository
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.xmu.edu.cn:2288/175...
Last time updated on 20/11/2020