79GHz integrated antenna on low resistivity Si BiCMOS exploiting above-IC processing

Abstract

International audienceThis paper analyses the antenna implementation onBiCMOS technology. A dipole antenna, working at 79GHz, is implemented and manufactured. The radiation simulated results reveal low gain (-6.8dBi with IE3D and 8.5 with FEKO) and lowradiation efficiency (8.9% with IE3D, 10.39% with FEKO), as expected. Classical techniques to optimise these performances require complex fabrication process. An alternative solution based on masking technique is presented offering low cost and good performance advantages. In this way, +2.65dBi of gain and 37% of radiation efficiency are obtained with an antenna implemented on BiCMOS technology with post-IC processing