Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel

Abstract

International audienceGallium nitride based High Electron Mobility Transistors (HEMT) are powerful candidates for high frequency and high power applications. Unfortunately, while switching applications demand normally-off operation, these devices are normally-on. In this paper, after calibrating the simulator using experimental data, we address the advantages and drawbacks of two normally-off HEMT devices: the previously proposed Gate Injection Transistor (GIT) and our newly proposed HEMT with a p-GaN region below the channel. Afterwards, an hybrid normally-off HEMT is proposed, combining both techniques, aiming to merge their advantages and remedying their drawbacks