We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50
to 100nm and various widths at very low temperature. Independent of the
geometry, localized states appear when G=e^{2}/h and transport is dominated by
resonant tunnelling through a single quantum dot formed by an impurity
potential. We find that the typical size of the relevant impurity quantum dot
is comparable to the channel length and that the periodicity of the observed
Coulomb blockade oscillations is roughly inversely proportional to the channel
length. The spectrum of resonances and the nonlinear I-V curves allow to
measure the charging energy and the mean level energy spacing for electrons in
the localized state. Furthermore, we find that in the dielectric regime, the
variance var(lng) of the logarithmic conductance lng is proportional to its
average value consistent with one-electron scaling models.Comment: 4 pages, 4 figure