We study the effect of the domain wall on electronic transport properties in
wire of ferromagnetic 3d transition metals based on the linear response
theory. We considered the exchange interaction between the conduction electron
and the magnetization, taking into account the scattering by impurities as
well. The effective electron-wall interaction is derived by use of a local
gauge transformation in the spin space. This interaction is treated
perturbatively to the second order. The conductivity contribution within the
classical (Boltzmann) transport theory turns out to be negligiblly small in
bulk magnets, due to a large thickness of the wall compared with the fermi
wavelength. It can be, however, significant in ballistic nanocontacts, as
indicated in recent experiments. We also discuss the quantum correction in
disordered case where the quantum coherence among electrons becomes important.
In such case of weak localization the wall can contribute to a decrease of
resistivity by causing dephasing. At lower temperature this effect grows and
can win over the classical contribution, in particular in wire of diameter
Lβ₯ββ²βΟβ, βΟβ being the inelastic diffusion
length. Conductance change of the quantum origin caused by the motion of the
wall is also discussed.Comment: 30 pages, 4 figures. Detailed paper of Phys. Rev. Lett. 78, 3773
(1997). Submitted to J. Phys. Soc. Jp