We model an apparent instability seen in recent experiments on current
induced step bunching on Si(111) surfaces using a generalized 2D BCF model,
where adatoms have a diffusion bias parallel to the step edges and there is an
attachment barrier at the step edge. We find a new linear instability with
novel step patterns. Monte Carlo simulations on a solid-on-solid model are used
to study the instability beyond the linear regime.Comment: 4 pages, 4 figure