Lead (II) nitride (Pb(NO3)2), titanium dioxide
(TiO2) and potassium hydroxide (KOH) were used as
starting materials. Lead titanate powder was formed by
hydrothermal method at 150 C for 6h. The calcuim
fluoride (CaF2) and titanium dioxide (TiO2) were
separately adapted as intermediate layer on p-Si (100)
substrate. Lead titanate thin film was formed onto
CaF2/Si and TiO2/Si substrates by spin processor.
100kHz C-V characteristics of PbTiO3 films were
measured by impedance analyzer (LCR meter).
Polarization-electric field (P-E) characteristics were
measured for both MFIS (Metal/ Ferroelectric/
Insulator/ Semiconductor) structures by applying the
same triangular wave electric field in order to allow their
application in NVFRAM (Non Volatile Ferroelectric
Random Access Memory)