We report on the change of the characteristic times of the random telegraph
signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as
the microwave field power is raised. The effect is explained by considering the
time dependency of the transition probabilities due to a harmonic voltage
generated by the microwave field that couples with the wires connecting the
MOSFET. From the dc current excited into the MOSFET by the microwave field we
determine the corresponding equivalent drain voltage. The RTS experimental data
are in agreement with the prediction obtained with the model, making use of the
voltage data measured with the independent dc microwave induced current. We
conclude that when operating a MOSFET under microwave irradiation, as in single
spin resonance detection, one has to pay attention into the effects related to
microwave irradiation dependent RTS changes.Comment: 3 pages, 4 figure