MgB2 tunnel junctions with native or thermal oxide barriers

Abstract

MgB2 tunnel junctions (MgB2/barrier/MgB2) were fabricated using a native oxide grown on the bottom MgB2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300oC, even over junction areas of ~1 mm2. Studies of such junctions, and those of the type MgB2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB2 exhibit a wide range of barrier heights and widths.Comment: 9 pages, 3 figure