The properties of a wide variety of growing models, generically called
X/RD, are studied by means of numerical simulations and analytic
developments. The study comprises the following X models: Ballistic
Deposition, Random Deposition with Surface Relaxation, Das Sarma-Tamboronea,
Kim-Kosterlitz, Lai-Das Sarma, Wolf-Villain, Large Curvature, and three
additional models that are variants of the Ballistic Deposition model.
It is shown that after a growing regime, the interface width becomes
saturated at a crossover time (tx2) that, by fixing the sample size,
scales with p according to tx2(p)∝p−y,(p>0), where
y is an exponent. Also, the interface width at saturation (Wsat) scales
as Wsat(p)∝p−δ,(p>0), where δ is another
exponent.
It is proved that, in any dimension, the exponents δ and y obey the
following relationship: δ=yβRD, where βRD=1/2 is
the growing exponent for RD. Furthermore, both exponents exhibit universality
in the p→0 limit.
By mapping the behaviour of the average height difference of two neighbouring
sites in discrete models of type X/RD and two kinds of random walks, we have
determined the exact value of the exponent δ.
Finally, by linking four well-established universality classes (namely
Edwards-Wilkinson, Kardar-Parisi-Zhang, Linear-MBE and Non-linear-MBE) with the
properties of both random walks, eight different stochastic equations for all
the competitive models studied are derived.Comment: 23 pages, 6 figures, Submitted to Phys. Rev.