Ga(In, Al)N alloys are used as an active layer or cladding layer in light
emitting diodes and laser diodes. x-ray diffraction is extensively used to
evaluate the crystalline quality, the chemical composition and the residual
strain in Ga(Al,In)N thin films, which directly determine the emission
wavelength and the device performance. Due to the minor mismatch in lattice
parameters between Ga(Al, In)N alloy and a GaN virtual substrate, x-ray
diffraction comes to a problem to separate the signal from Ga(Al,In)N alloy and
GaN. We give a detailed comparison on different diffraction planes. In order to
balance the intensity and peak separation between Ga(Al,In)N alloy and GaN,
(0004) and (1015) planes make the best choice for symmetric scan and asymmetric
scan, respectively.Comment: 9 pages, 5 figure