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Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
Authors
SERGE BIESEMANS
CHEN JINGDE
+4Â more
JORGE ADRIAN KITTL
DIM-LEE KWONG
LI MINGFU
HONGYU YU
Publication date
17 March 2009
Publisher
Abstract
US7504329Granted Paten
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Last time updated on 09/11/2016