Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes

Abstract

We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.Comment: 10 pages, 3 figures, submitted to Phys. Rev. B; typo removed in revised version - spurious eq.12 immediately after eq.1