This work describes multiband photon detection techniques based on novel semiconductor device concepts and detector designs with simultaneous detection of dierent wavelength radiation such as UV and IR. One aim of this investigation is to examine UV and IR detection concepts with a view to resolve some of the issues of existing IR detectors such as high dark current, non uniformity, and low operating temperature and to avoid having additional optical components such as filters in multiband detection. Structures were fabricated to demonstrate the UV and IR detection concepts and determine detector parameters: (i) UV/IR detection based on GaN/AlGaN heterostructures, (ii) Optical characterization of p-type InP thin films were carried out with the idea of developing InP based detectors, (iii) Intervalence band transitions in InGaAsP/InP heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. Device concepts, detector structures, and experimental results are discussed. In order to reduce reflection, TiO2 and SiO2 nanostructured thin film characterization and application of these as anti-reflection coatings on above mentioned detectors is also discussed
