We present an approach to spin dynamics by extending the optical Bloch
equations for the driven two-level system to derive microscopic expressions for
the transverse and longitudinal spin relaxation times. This is done for the
6-level system of electron and hole subband states in a semiconductor or a
semiconductor quantum structure to account for the degrees-of-freedom of the
carrier spin and the polarization of the exciting light and includes the
scattering between carriers and lattice vibrations on a microscopic level. For
the subsystem of the spin-split electron subbands we treat the electron-phonon
interaction in second order and derive a set of equations of motion for the 2x2
spin-density matrix which describes the electron spin dynamics and contains
microscopic expressions for the longitudinal (T_1) and the transverse (T_2)
spin relaxation times. Their meaning will be discussed in relation to
experimental investigations of these quantities.Comment: 9 pages, 3 figures, Replacement of cond-mat/0407358 due to
substantial revisio