The Coulomb interaction between electrons of opposite spin orientations in a
metal or in a doped semiconductor results in a negative off-diagonal component
of the electrical resistivity matrix -- the so-called "spin-drag resistivity".
It is generally quite difficult to separate the spin-drag contribution from
more conventional mechanisms of resistivity. In this paper I discuss two
methods to accomplish this separation in a spin-valve device.Comment: 11 pages, 5 figure

Vignale, G.

English

arXiv

URL:http://link.aps.org/doi/10.1103/PhysRevB.71.125103
DOI:10.1103/PhysRevB.71.125103The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spin-drag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.The author gratefully acknowledges the hospitality of the Center for Nanoscience of the University of Science and Technology of China, Hefei, China, where much of this work
was completed, and support from NSF Grant No. DMR-0313681

Observing the spin-Coulomb drag in spin-valve devices

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